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Title:
SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND FABRICATION THEREOF
Document Type and Number:
Japanese Patent JPH088348
Kind Code:
A
Abstract:

PURPOSE: To enhance reliability of a DRAM, along the fabrication yield thereof, in which capacitive insulating film of a capacitive element (capacitor) for storing information is composed of a ferroelectric trim.

CONSTITUTION: A polisilicon film 13 filling a contact hole 12 reaching one semiconductor region 7 of an MTSFET Qt for selecting the memory cell constitutes a storage electrode 13. The surface of the storage electrode 13 is then made flat thus depositing a PZT film 14 with low step coverage stably. Furthermore, the upper and lower layers of the PZT film 14 are provided with high melting point metal films 15, 17 in order to prevent interfacial reaction between the storage electrode or a plate electrode 16 and the PZT film 14 caused by heat treatment during the fabrication process.


Inventors:
FUJIOKA YASUHIDE
UCHIYAMA HIROYUKI
KANEKO YOSHIYUKI
SOEDA KOKI
MATSUDA NOZOMI
SAWAMURA MOTOKO
Application Number:
JP13707494A
Publication Date:
January 12, 1996
Filing Date:
June 20, 1994
Export Citation:
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Assignee:
HITACHI LTD
HITACHI HOKKAI SEMICONDUCTOR
HITACHI INSTRUMENTS ENG
HITACHI VLSI ENG
International Classes:
H01L27/04; H01L21/822; H01L21/8242; H01L21/8246; H01L27/10; H01L27/105; H01L27/108; (IPC1-7): H01L21/8242; H01L21/822; H01L27/04; H01L27/108
Attorney, Agent or Firm:
Yamato Tsutsui



 
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