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Patent Searching and Data


Title:
SEMICONDUCTOR INTEGRATED CIRCUIT
Document Type and Number:
Japanese Patent JPH06224728
Kind Code:
A
Abstract:

PURPOSE: To obtain the semiconductor integrated circuit with sure operation and excellent reliability by preventing occurrence of a leakage current which often might be caused in a protection circuit for a MOSIC receiving a lower power supply voltage when MOS ICs whose power supply voltage differs are employed in the semiconductor integrated circuit.

CONSTITUTION: A protection circuit 21 is made up of diode-connected n-channel MOS transistors(TRs) N4/N1 connected in series. A threshold voltage of TRs (two TRs in figure 1) whose gate electrode connects to an external terminal 6 is set higher than a threshold voltage of MOS TRs in an internal circuit 3. Furthermore, an external signal VIN is delivered to the internal circuit 3 via an n-channel MOS TR N5 as a transfer gate.


Inventors:
NAKATAKE KENICHI
ITOU TAKAHARU
Application Number:
JP873293A
Publication Date:
August 12, 1994
Filing Date:
January 22, 1993
Export Citation:
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Assignee:
NIPPON ELECTRIC IC MICROCOMPUT
International Classes:
H03K19/003; G11C11/409; H03K19/0948; (IPC1-7): H03K19/003; H03K19/0948
Attorney, Agent or Firm:
Naoki Kyomoto (2 outside)