Title:
SEMICONDUCTOR LASER AND MANUFACTURE THEREOF
Document Type and Number:
Japanese Patent JP3697304
Kind Code:
B2
Abstract:
PURPOSE: To realize a desired resistance value of a p-type doped layer and improve reliability, by causing Mg and Si to be contained in an upper p-type clad layer made mainly of III-V compound semiconductor.
CONSTITUTION: A first buffer layer 11 and a second buffer layer 12 are formed on a substrate 10. A first clad layer 13 containing AlGaN is formed by adding an n-type doping material, such as, SiH4, to an organic metal Al compound and an organic metal Ga compound. An active layer 14 is made of an organic Ga compound thereto. A second clad layer 15 is formed by adding a p-type doping material, such as, an organic metal Al compound, to an organic metal Al compound and an organic metal Ga compound. Then, a contact layer 16 is formed, and an Au/TiAl electrode 17 is formed on the exposed surface of the second buffer layer 12. Finally, an Au/Ni electrode 18 is formed. Thus, a semiconductor layer 19 is provided.
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Inventors:
Yasuo Ohba
Gohan Hatano
Gohan Hatano
Application Number:
JP33042595A
Publication Date:
September 21, 2005
Filing Date:
December 19, 1995
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
H01L21/205; H01L21/363; H01L21/365; H01L29/45; H01S5/00; H01S5/323; H01S5/327; H01S5/343; (IPC1-7): H01S5/323; H01L21/205; H01L21/363; H01L21/365; H01S5/327
Domestic Patent References:
| JP6164054A | ||||
| JP6334272A | ||||
| JP8208395A |
Attorney, Agent or Firm:
Takehiko Suzue