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Title:
SEMICONDUCTOR LASER
Document Type and Number:
Japanese Patent JPH0818158
Kind Code:
A
Abstract:

PURPOSE: To obtain a refractive index waveguide semiconductor laser having a low oscillation threshold and excellent characteristics.

CONSTITUTION: The semiconductor laser 16 comprises a buffer layer 2, a clad layer 3, an optical guide layer 4, an active layer 5, an optical guide layer 6, and a clad layer 7 grown sequentially on a substrate 1. A ridge 9 is formed by etching from the clad layer 7 to the vicinity of the active layer 5 using a chrome based etching liquid. An insulating layer 10 having the surface flush with that of the ridge 9 and a refractive index lower than those of the active layer 5 and the clad layer 6 is formed on the etched surface. Furthermore, a clad layer 11, a superlattice layer 12, and a contact layer 13 are formed on the ridge 9 and the insulating layer 10. Finally, an n-type electrode 14 is formed on the rear surface of the substrate 1 and a p-type electrode 15 is formed on the surface of the contact layer 13.


Inventors:
MORITA KATSUHIKO
Application Number:
JP1994000170215
Publication Date:
January 19, 1996
Filing Date:
June 29, 1994
Export Citation:
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Assignee:
VICTOR COMPANY OF JAPAN
International Classes:
H01S5/00; (IPC1-7): H01S3/18