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Patent Searching and Data


Title:
SEMICONDUCTOR LIGHT EMITTING DEVICE AND FABRICATION THEREOF
Document Type and Number:
Japanese Patent JPH0653544
Kind Code:
A
Abstract:

PURPOSE: To realize a light emitting device displaying an image through self luminescence by integrating ultrafine silicon lines and arranging light emitting elements flatly.

CONSTITUTION: A silicon layer 3 is formed through an insulation layer 2 on a substrate 1 by so-called SIMOX method for forming an SiO2 film in an Si substrate 1. Ultrafine silicon lines 13, having width W in the order of 10nm, are then formed on the silicon layer 3 through flux ion beam etching, for example. The ultrafine silicon lines 3 are integrated flatly and the widths W1-W3 of the fine lines are modulated and patterned to vary the luminescent wavelength band thus constituting pixels of red R, green G, and blue B, for example. Consequently, column select signal line 24 and luminance control line 22 corresponding with each light emitting element 11 are selected in accordance with the signal and the light emitting element 11 is fed with carrier and emits light upon application of a predetermined voltage thus realizing display of a color image.


Inventors:
NAGASHIMA NAOKI
Application Number:
JP20559392A
Publication Date:
February 25, 1994
Filing Date:
July 31, 1992
Export Citation:
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Assignee:
SONY CORP
International Classes:
H01L27/15; H01L33/08; H01L33/10; H01L33/34; H01L33/40; (IPC1-7): H01L33/00; H01L27/15
Attorney, Agent or Firm:
松隈 秀盛