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Patent Searching and Data


Title:
SEMICONDUCTOR LIGHT FUNCTION ELEMENT
Document Type and Number:
Japanese Patent JPH04336474
Kind Code:
A
Abstract:
PURPOSE:To enable an unneeded emission at a light-reception portion to be suppressed, causes for noise to be eliminated, and characteristics of an element to be improved by inserting a layer for preventing a current caused by carriers which are diffused to a light-reception portion without being consumed at a light-emission portion of a semiconductor light function element between the light-reception portion and the light-emission portion. CONSTITUTION:A light-emitting diode constituting a light-emission portion 41 has a double hetero junction structure and a light-emission portion 40 is a hetero-junction photo transistor using an emitter with a large forbidden bandwidth. A block layer 30 is of N type and prevents a positive hole which is overflown and diffused from the light-emitting diode since it cannot be recombined so that the forbidden bandwidth is larger than that of an n-type clad layer 26 and that of an n-type collector layer 25. Therefore, it is transparent for light which is positively fed back from the light- emission element to a light-reception element, thus preventing non-linearity characteristics or hysteresis characteristics between input/output strengths of a light- function element from being lost. Also, the block layer 30 prevents the positive holes from being diffused to the phototransistor, thus enabling emission at a p-type base layer 24 to be restricted.

Inventors:
OSAWA YASUHIRO
SATO SHIRO
Application Number:
JP10742291A
Publication Date:
November 24, 1992
Filing Date:
May 13, 1991
Export Citation:
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Assignee:
RICOH KK
RICOH GEN ELECTRON RES INST
International Classes:
G02F3/00; H01L27/15; H01L31/14; H01L33/30; H01L33/40; (IPC1-7): G02F3/00; H01L27/15; H01L31/14; H01L33/00
Attorney, Agent or Firm:
Toru Kabayama (1 person outside)