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Patent Searching and Data


Title:
SEMICONDUCTOR LIGHT RECEPTION ELEMENT
Document Type and Number:
Japanese Patent JP3373794
Kind Code:
B2
Abstract:

PROBLEM TO BE SOLVED: To provide the semiconductor light reception element of a Schottky barrier-type, which has higher superior sensitivity and has superior resistance with respect to light of a wavelength in the ultraviolet region.
SOLUTION: This GaN semiconductor layer of an n-type or a p-type is set as a light reception layer 1. A face on one side of the light reception layer 1 is set as a light reception face 1a, and Schottky electrodes 2 are installed on a light reception face 1a. The total length of boundaries between region covered by the Schottky electrodes and an exposed region is set to be longer than the outer periphery of the light reception face, and a light L emitted from the upper face direction of the Schottky electrodes can be received, so that the photodiode of a Schottky barrier-type is obtained.


Inventors:
Tadatomo, Kazuyuki
Okagawa, Hiroaki
Ouchi, Yoichiro
Koto, Masahiro
Hiramatsu, Kazumasa
Hamamura, Hiroshi
Shimizu, Sumuto
Application Number:
JP1998000265506
Publication Date:
February 04, 2003
Filing Date:
September 18, 1998
Export Citation:
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Assignee:
MITSUBISHI CABLE IND LTD
NIKON CORP
International Classes:
H01L31/108; (IPC1-7): H01L31/108
Other References:
Lim et al.,8 X 8 GaN Schottky barrier photodiode array for visible−blind imaging,Electronics Letters,27 March 1997,vol.33,No.7,p.633−634
Attorney, Agent or Firm:
Takashima 1