Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
SEMICONDUCTOR MEMORY DEVICE
Document Type and Number:
Japanese Patent JPS59132161
Kind Code:
A
Abstract:

PURPOSE: To make the density of a mask ROM high, in the mask ROM arranged on an MIS type integrated circuit, by fixing information based on whether an insulating film is provided in contact windows or not.

CONSTITUTION: A plurality of stripe shaped second conductive regions 3, which are to become address lines CA, are provided on the surface of a first conductive type semiconductor substrate 1. Meanwhile, island shaped first conductive type regions 4, which are to become the intersections of matrix that are aligned and wired on the surface of the regions 3, are provided. A first insulating film 6 having electrode contact windows 5 and 5' is formed on the regions 4. A plurality of metal wirings 7, which are to become lateral address lines RA that are aligned in the direction crossing the regions 3 at a right angle and bridges the contact windows 5 and 5', are formed on the insulating film 6. The fixing of information is performed by removing the insulating film 6 at the contact windows 5' and contacting the wirings 7 and the regions 4.


Inventors:
SATOU NORIAKI
Application Number:
JP645783A
Publication Date:
July 30, 1984
Filing Date:
January 18, 1983
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
FUJITSU LTD
International Classes:
G11C17/06; H01L21/331; H01L21/8229; H01L27/102; H01L29/73; (IPC1-7): G11C17/00; H01L27/10; H01L29/72



 
Previous Patent: JPS59132160

Next Patent: SOLID STATE IMAGE PICK-UP DEVICE