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Title:
SEMICONDUCTOR PRESSURE MEASURING DEVICE AND FABRICATION THEREOF
Document Type and Number:
Japanese Patent JPH09113390
Kind Code:
A
Abstract:

To fabricate a semiconductor pressure measuring device having low pressure range through stabilized process while suppressing fluctuation in the characteristics by providing a single crystal silicon substrate, an air gap chamber and a strain detection element and using silicon direct bonding technology.

A high measuring pressure is applied to a second single crystal silicon substrate 44 and a low measuring pressure is applied to an air gap chamber 43. A diaphragm 45 is strained depending on the pressure difference and the strain is detected electrically by means of a strain detection element 46 in order to determine the pressure. In such a semiconductor pressure measuring device fabricated by silicon direct bonding technology, the air gap chamber 43 is formed upon finishing high temperature process, e.g. heat treatment for bonding a polysilicon layer 42 and a second single crystal silicon substrate 44 and heat treatment for fabricating the pressure detection sensor 46. Since deformation of diaphragm 45 is eliminated, a sensor having low pressure range can be realized and a semiconductor pressure measuring device in which the fluctuation of characteristics is suppressed can be obtained.


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Inventors:
WATANABE TETSUYA
Application Number:
JP26839495A
Publication Date:
May 02, 1997
Filing Date:
October 17, 1995
Export Citation:
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Assignee:
YOKOGAWA ELECTRIC CORP
International Classes:
G01L9/04; G01L9/00; G01L19/06; H01L29/84; (IPC1-7): G01L9/04; G01L19/06; H01L29/84
Attorney, Agent or Firm:
渡辺 正康