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Title:
SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR LIGHT-EMITTING DEVICE
Document Type and Number:
Japanese Patent JP3151096
Kind Code:
B2
Abstract:

PURPOSE: To provide a structure which can manufacture a semiconductor light- emitting device in such a way that the efficiency of taking out light to the outside without impairing the stability and reproducibility of device characteristics.
CONSTITUTION: A mesa type groove 11 is formed slanted from a plane (011) to a plane (0-11) on the surface of an n type GaAs substrate 1. A semiconductor layer formed on this substrate 1 which is formed on an upper region of the mesa type groove 11, has a different degree of crystalline order from that of a semiconductor layer formed in other regions. There b a startup voltage difference in a pn junction based on a difference of the degree of crystalline order. Consequently, when a p type electrode 7 on the semiconductor layer side is provided in a region corresponding to the mesa type groove 11, it is possible to selectively inject current to the semiconductor layer at areas other than directly under the p type electrode 7 to make them a light-emitting area.


Inventors:
Nakatsu, Hiroshi
Application Number:
JP1993000315618
Publication Date:
April 03, 2001
Filing Date:
December 15, 1993
Export Citation:
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Assignee:
SHARP CORP
International Classes:
H01L33/06; H01L33/14; H01L33/16; H01L33/30; H01S5/00; H01S5/343; (IPC1-7): H01L33/00; H01S5/343
Attorney, Agent or Firm:
山本 秀策