Title:
SEMICONDUCTOR SUBSTRATE AND METHOD OF INACTIVATING SURFACE THEREOF
Document Type and Number:
Japanese Patent JP3496058
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To further reduce the recombination of carriers on the surface of a semiconductor substrate such as a silicon substrate by further inactivating the surface of the semiconductor substrate.
SOLUTION: The surface treatment of the semiconductor substrate such as a silicon substrate is performed by dipping a part or the whole of the semiconductor substrate in a solution including quinhydrone or quasi-quinhydrone. The solution includes an organic solvent and/or water as a solvent. The organic solvent can include either one or ones, out of alcohol such as ethanol or methanol, ether such as diethyl ether, ether, or mether, and benzene. The quinhydrone can be in such a state that a part or the whole is disaggregated into quinone and hydroquinone in a solution, or in such a state that a part or the whole is disaggregated into semiquinone.
Inventors:
Hidenao Takato
Isao Sakata
Ryuichi Shimokawa
Isao Sakata
Ryuichi Shimokawa
Application Number:
JP2001134113A
Publication Date:
February 09, 2004
Filing Date:
May 01, 2001
Export Citation:
Assignee:
National Institute of Advanced Industrial Science and Technology
International Classes:
H01L31/04; H01L21/304; (IPC1-7): H01L21/304; H01L31/04
Domestic Patent References:
| JP982676A | ||||
| JP1012584A |