Title:
SiC STRUCTURE AND PRODUCTION METHOD OF THE SAME, AND SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2018035051
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To prepare a surface of a single crystal SiC layer into an appropriate plane where a film is in contact with.SOLUTION: A SiC structure is provided, which includes: a single crystal SiC layer 10 comprising both of a hexagonal close-packed structure 32 and a cubic close-packed structure 34; and a film 20 formed on the single crystal SiC layer and comprising a material different from SiC. The surface of the single crystal SiC layer where the film is in contact with is a plane exposing only either an HCP surface in which the site position of an atom on the outermost surface side and the site position of the atom in the third layer from the surface are the same, or a CCP surface in which the site position of an atom on the outermost surface side is different from the site position of the atom in the third layer from the surface.SELECTED DRAWING: Figure 4
Inventors:
NAGASAWA HIROYUKI
SUEMITSU MAKI
FUKITOME HIROKAZU
TATENO YASUNORI
MIHASHI FUMINORI
OKADA MASAYA
UENO MASANORI
SUEMITSU MAKI
FUKITOME HIROKAZU
TATENO YASUNORI
MIHASHI FUMINORI
OKADA MASAYA
UENO MASANORI
Application Number:
JP2016172296A
Publication Date:
March 08, 2018
Filing Date:
September 02, 2016
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES
UNIV TOHOKU
UNIV TOHOKU
International Classes:
C01B32/956; C01B32/15; C01B32/18; C01B32/182; C30B29/36; C30B33/08; H01L21/20; H01L21/336; H01L29/78
Domestic Patent References:
| JP2007335532A | 2007-12-27 |
Attorney, Agent or Firm:
Shuhei Katayama