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Title:
炭化珪素粉末
Document Type and Number:
Japanese Patent JP6669469
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a silicon carbide powder capable of preventing growth of SiC crystal near the center and inhibiting reduction in sublimation rate even when charged in a melting pot and heated.SOLUTION: There is provided a silicon carbide powder having the value of a ratio between heat conductivity (W/m K)/light dress bulk density (g/cm) of 0.16 to 0.50. The light dress bulk density is preferably 0.6 to 2.2 g/cmand particle diameter is preferably 100 to 2000 μm.SELECTED DRAWING: None

Inventors:
Kiyoshi Nonaka
Hironori Ishida
Kenta Masuda
Application Number:
JP2015213680A
Publication Date:
March 18, 2020
Filing Date:
October 30, 2015
Export Citation:
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Assignee:
Taiheiyo Cement Co., Ltd.
International Classes:
C01B32/956; C30B23/06; C30B29/36
Domestic Patent References:
JP2015044726A
Attorney, Agent or Firm:
Creation International Patent Office