PURPOSE: To remove various kinds of metal elements seized in a naturally oxidized film by washing a silicon wafer with a cleaning liquid including hydrogen peroxide and then rinsing the wafer with a rinsing solution formed of ultrapure water containing ozone and hydrofluoric acid of such concentration that do not perfectly dissolve the formed naturally oxidized film.
CONSTITUTION: In view of cleaning the surface of a silicon wafer, it is then washed with a cleaning solution including hydrogen peroxide to remove fine particles and form a naturally oxidized film. Thereafter, the etching effect of the hydrofluoric acid is improved with ozone and then executing the linsing with a rinsing solution formed of the ultrapure water to etch off the naturally oxidized film at the area near the surface and to reflectively bleaching impurity leaving the layer near silicon. Cleaning effect for contamination by addition of ozone is never found but it is remarkably improved when HF is added thereto and when HF is 100ppm, an ordinary cleaning effect can be obtained. HF in the rinsing solution never gives adverse effect on the silicon surface.
OTA YOSHIHARU
FUKAZAWA YUJI
NOMURA MICRO SCIENCE KK
TOSHIBA CORP
| JPH04144131A | 1992-05-18 | |||
| JPH04103124A | 1992-04-06 | |||
| JPH0848996A | 1996-02-20 |
Next Patent: CLEANING SOLUTION FOR SILICON WAFER AND CLEANING METHOD