PURPOSE: To completely prevent channel leak in a solid state color image sensing device in which an organic material layer on an element is required to be formed in order to arrange a color filter, by covering at least a part of a channel stopper region arranged between facing impurity introduced region, with an electrode.

CONSTITUTION: In a solid state image sensing element, on the main surface of which a color filter is arranged, at least a part of a channel stopper region 2 arranged between facing impurity introduced regions 3, 4 is covered with an electrode 10. For example, an aluminum electrode 10 of an N-type diffusion layer 3 in a region where an input protecting circuit of the solid state image sensing device is formed, is extended as far as a part on a channel stopper layer 2, and the electrode 10 is utilized as also a shielding electrode. Thereby, in the case where an organic material layer 8 as an interposing layer to arrange a color filter for color use is applied on the whole surface, a conductive inversion layer 9 does not generate on the surface of the channel stopper layer 2 just under the aluminum electrode 10, so that channel leak can be effectively prevented from occurring.