To obtain a sputtering device that continuously eliminates static electricity from a treated substrate from the initial stage of film formation to suppress abnormal discharge.
The sputtering device for forming a conductive film 103 on the treated substrate 100 by a sputtering process includes: a treatment chamber; conveyance rollers 3 which include a metal roller base part 3L and a resin member 3R that is provided on the entire circumference of the roller base part 3L; and a conducting part 3S which is electrically conducted to the roller base part 3L while coating the surface of the resin member 3R therewith. During formation of the conductive film 103 on the treated substrate 100 in the treatment chamber, the treated substrate 100 is brought into contact with the conducting part 3S and conveyed by the conveyance rollers 3, and is subjected to sputtering while the static electricity thereof is eliminated through the conducting part 3S.
KAJITA EISAKU
JPH10204629A | 1998-08-04 | |||
JPH06250162A | 1994-09-09 | |||
JPH10280142A | 1998-10-20 | |||
JPH10133229A | 1998-05-22 | |||
JPH05239641A | 1993-09-17 | |||
JP2006248627A | 2006-09-21 | |||
JP2001176946A | 2001-06-29 | |||
JP2002274642A | 2002-09-25 | |||
JP2000072274A | 2000-03-07 | |||
JPH06204536A | 1994-07-22 | |||
JP2008069402A | 2008-03-27 | |||
JPH10204629A | 1998-08-04 | |||
JPH06250162A | 1994-09-09 | |||
JPH10280142A | 1998-10-20 | |||
JPH10133229A | 1998-05-22 | |||
JPH05239641A | 1993-09-17 | |||
JP2006248627A | 2006-09-21 | |||
JP2001176946A | 2001-06-29 | |||
JP2002274642A | 2002-09-25 | |||
JP2000072274A | 2000-03-07 |
US20100163406A1 | 2010-07-01 | |||
US20100163406A1 | 2010-07-01 |