Title:
SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
Document Type and Number:
Japanese Patent JP2014209582
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a substrate processing apparatus capable of promptly adjusting a temperature of a process liquid in the middle of the substrate processing, and to provide a substrate processing method.SOLUTION: A substrate processing apparatus 1 according to one embodiment comprises: a support part 4 which supports a substrate W; a rotary mechanism 5 which rotates the support part 4 using a shaft, which intersects with the substrate W supported by the support part 4, as a rotation shaft; a nozzle 6 which supplies a process liquid to a surface of the substrate W on the support part 4 rotated by the rotary mechanism 5; a heater 8 which heats the substrate W supported by the support part 4 while being separated from the substrate W; and a movement mechanism 9 which moves the heater 8 toward and away from the substrate W supported by the support part 4.
Inventors:
HAMADA KOICHI
KOBAYASHI NOBUO
KOBAYASHI NOBUO
Application Number:
JP2014048638A
Publication Date:
November 06, 2014
Filing Date:
March 12, 2014
Export Citation:
Assignee:
SHIBAURA MECHATRONICS CORP
International Classes:
H01L21/304; G02F1/13; H01L21/027; H01L21/306
Domestic Patent References:
JP2005142290A | 2005-06-02 | |||
JP2012169509A | 2012-09-06 | |||
JP2005032990A | 2005-02-03 |
Attorney, Agent or Firm:
Brook Shin-ichi
Fumihiko Nakahara
Fumihiko Nakahara
Previous Patent: JP2014209581
Next Patent: ORGANIC THIN-FILM TRANSISTOR, ORGANIC SEMICONDUCTOR THIN FILM, AND ORGANIC SEMICONDUCTOR MATERIAL
Next Patent: ORGANIC THIN-FILM TRANSISTOR, ORGANIC SEMICONDUCTOR THIN FILM, AND ORGANIC SEMICONDUCTOR MATERIAL