Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
SUBSTRATE FOR SEMICONDUCTOR DEVICE AND SOI SUBSTRATE
Document Type and Number:
Japanese Patent JP2011138826
Kind Code:
A
Abstract:

To provide a substrate for semiconductor devices, which is used for manufacturing a thin-type semiconductor device subjected to back grinding machining and back CMP processing, and in which adequate backgrinding is performed, a grinding speed is increased, and the efficiency of a productivity is improved.

In the substrate 10 for semiconductor devices, a structure transition layer 12 is formed inside a crystalline silicon substrate 11. The structure transition layer 12 does not form a conductivity type region, is formed by implanting ions, and changes to a crystal structure different from that of silicon.


Inventors:
NITTA HIROSHI
ISOBE AKIRA
Application Number:
JP2009296304A
Publication Date:
July 14, 2011
Filing Date:
December 25, 2009
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
NITTA HAAS INC
International Classes:
H01L23/52; H01L21/265; H01L21/3205; H01L27/12
Attorney, Agent or Firm:
Keiichiro Saikyo