Title:
SUSCEPTOR FOR VAPOR GROWTH
Document Type and Number:
Japanese Patent JP3887052
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide the susceptor by which a semiconductor is not contaminated and which has a long service life.
SOLUTION: This susceptor comprises a graphite base material 2 in which a countersunk concave part 4 for receiving and placing a semiconductor wafer 3 is formed and also, the surface of which is coated with a silicon carbide film 5 by a CVD(chemical vapor deposition) method. In the susceptor, of the surface of the graphite base material 2 or the coated surface with the silicon carbide film 5, at least a region 7 equivalent to the whole peripheral upper surface of an upper edge corner part 6 of the countersunk concave part 4 is formed so as to have a surface roughness value smaller than that of any region of the surface of the graphite base material 2 or the coated surface with the silicon carbide film 5, other than the region 7.
Inventors:
Hiroyuki Hirano
Yoshiaki Yoshimoto
Toshihiro Hosokawa
Masaki Okada
Yoshiaki Yoshimoto
Toshihiro Hosokawa
Masaki Okada
Application Number:
JP33356396A
Publication Date:
February 28, 2007
Filing Date:
December 13, 1996
Export Citation:
Assignee:
Toyo Tanso Co., Ltd.
International Classes:
C30B25/12; C23C16/44; C23C16/458; H01L21/205; (IPC1-7): C30B25/12; C23C16/44; H01L21/205
Domestic Patent References:
| JP7335572A | ||||
| JP3146672A | ||||
| JP5283351A | ||||
| JP2174116A |
Attorney, Agent or Firm:
Yoshiyuki Kaji
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