Title:
熱処理装置
Document Type and Number:
Japanese Patent JP4470274
Kind Code:
B2
Abstract:
A higher-temperature heating zone and lower-temperature heating zone are set in a process chamber for a single-substrate-heat-processing apparatus in order to subject a wafer to two processes with different process temperatures. In the higher-temperature heating zone, the wafer is heated as it is placed on a worktable. In the lower-temperature heating zone, the wafer is heated with a smaller heat quantity as it floats above the worktable. In the lower-temperature heating zone, a heat ray reflector for compensating for heat dissipated from the peripheral portion of the wafer is disposed to surround the wafer.
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Inventors:
Ken Sakuma
Kenji Homma
Takahiro Horiguchi
Kenji Homma
Takahiro Horiguchi
Application Number:
JP2000126538A
Publication Date:
June 02, 2010
Filing Date:
April 26, 2000
Export Citation:
Assignee:
東京エレクトロン株式会社
International Classes:
F27B1/09; C23C16/46; H01L21/31; F27D3/12; F27D11/02; H01L21/00; H01L21/302; H01L21/3065
Domestic Patent References:
| JP5160046A | ||||
| JP2000077397A | ||||
| JP3053076A | ||||
| JP9143691A |
Attorney, Agent or Firm:
Akihiro Asai