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Patent Searching and Data


Title:
THERMOELECTRIC SEMICONDUCTOR ELEMENT
Document Type and Number:
Japanese Patent JPH04199860
Kind Code:
A
Abstract:

PURPOSE: To cool the cooling face to low temperature even under the condition of use where the heat radiation efficiency is small and prevent the deterioration by dewing by making a thermoelectric semiconductor layer around the carrier block, which consists of porous substances having blow holes, and making electrodes at the top and the bottom and making an airtight insulator layer at the side, and putting it in airtight structure.

CONSTITUTION: The object where a thermoelectric semiconductor layer 11 is constituted around a carrier block 14 is arranged through an insulator 13. And the other part is surrounded by the airtight insulator 13, and the carrier block and the semiconductor element part are put in airtight structure. Accordingly, even if the heat conductivity of the semiconductor element part 11 drops and the temperature rises on the heat radiation side, the quantity of heat conducted to the cooling side falls, and the temperature on the cooling side can be lowered. Especially, by deairing the porous substance 14, high heat insulation can be gotten with low degree of vacuum, and also the junction between the thermoelectric semiconductor 11 and the electrode 12 is of airtight structure, so the inside is deaired. Hereby, dewing does not occur at and around the junction interface, so the deterioration of this part can be prevented.


Inventors:
YOKOYA YOICHIRO
ANDO HAMAE
KUGIMIYA KOICHI
Application Number:
JP33592690A
Publication Date:
July 21, 1992
Filing Date:
November 29, 1990
Export Citation:
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Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
H01L23/38; H01L35/32; (IPC1-7): H01L23/38; H01L35/32
Attorney, Agent or Firm:
Hiroyuki Ikeuchi (1 person outside)