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Title:
THICK FILM CIRCUIT BOARD
Document Type and Number:
Japanese Patent JPH04239158
Kind Code:
A
Abstract:

PURPOSE: To obtain a circuit board which is excellent in terms of thermal conductivity and insulation properties and a circuit board capable of bonding with a conducting layer more powerfully by previously forming a metal Al layer on a reserved site electrode wiring on said aluminum nitride board.

CONSTITUTION: An intensive high energy wave is irradiated to an aluminum nitride board in order to generate a metal Al layer on a specified position. Laser light or electron beam is used as the intensive high energy wave. More specifically, Q switch originating YAG laser is used for the high energy wave. The irradiation conditions include output of 10W, Q rate of 9kHz, and beam size of about 200μm, and irradiation speed of 1.5mm/s under the nitrogen atmosphere. This beam is irradiated vertically to the aluminum nitride board so that the whole surface area of a 2mm×2mm portion may be turned into metal Al. At that time, the metal Al layer was about 3μm, where the decomposition reaction was carried out, say, from 2AlN to 2Al+N2↑.


Inventors:
KUBOTA TSUTOMU
Application Number:
JP1253691A
Publication Date:
August 27, 1992
Filing Date:
January 11, 1991
Export Citation:
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Assignee:
SUMITOMO METAL MINING CO
International Classes:
H01L23/12; H01L23/15; H05K3/10; (IPC1-7): H01L23/12; H01L23/15