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Title:
THIN-FILM TRANSISTOR ARRAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
Document Type and Number:
Japanese Patent JP2002190598
Kind Code:
A
Abstract:

To provide a thin-film transistor array substrate, used in a liquid crystal display or the like which has superior characteristics and a low defective rate, having no increase in the number of manufacturing processes, and to provide a method of manufacturing the same.

Using gray-tone exposure technology, interconnections which are partially different in thickness are formed, without having to increase the number of processes. In a part where electrical interconnections, such as scanning lines and signal lines intercross, difference in level between the interconnections can be reduced, resulting in improving the step coverage of an insulation film and reducing defects, such as short-circuitings and disconnections between the interconnections. Since a gate insulation film can be formed thinner than in the conventional one, an on-state current of the thin film transistor is increased.


Inventors:
GOTO SHINJI
Application Number:
JP2000386628A
Publication Date:
July 05, 2002
Filing Date:
December 20, 2000
Export Citation:
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Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
G02F1/1368; G09F9/30; H01L21/3213; H01L21/768; H01L23/522; H01L29/786; (IPC1-7): H01L29/786; G02F1/1368; G09F9/30; H01L21/3213; H01L21/768
Attorney, Agent or Firm:
Fumio Iwahashi (2 others)