Title:
PHOTOMASK
Document Type and Number:
Japanese Patent JPH0677204
Kind Code:
A
Abstract:
PURPOSE: To obtain a highly precise photomask in which the initial resist dimensions are reflected with fidelity.
CONSTITUTION: A treatment substrate 1 and a light-shielding pattern 10, which is formed on the transparent substrate 1, are provided. The light-shielding pattern 10 is formed by a laminated layer film wherein at least two types of films 6 and 7 are laminated. The two types of films 6 and 7 are formed by the material which can be etched independently using different etchants.
More Like This:
JPS63200535 | MANUFACTURE OF SEMICONDUCTOR DEVICE |
JPS62165937 | TREATMENT METHOD |
JP2002219432 | SOLVENT MIXTURE FOR REMOVAL OF HIGH PURITY PRECURSOR |
Inventors:
AOYAMA SATORU
Application Number:
JP22562792A
Publication Date:
March 18, 1994
Filing Date:
August 25, 1992
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H01L21/306; (IPC1-7): H01L21/306
Attorney, Agent or Firm:
Fukami Hisaro (3 outside)