Title:
SOLAR BATTERY
Document Type and Number:
Japanese Patent JPS6037788
Kind Code:
A
Abstract:
PURPOSE:To enable the further increase in efficiency by sandwiching an I type layer between a P type layer and an N type layer which have band gaps larger than that of the I type layer, the active layer. CONSTITUTION:A P type amorphous Si0.75C0.25 film 3 having a band gap Ep: 2.0eV is formed on the clear electrode 2 of a glass substrate 1. Next, the I type amorphous Si film 4 having a band gap Ei: 1.8eV is formed. Further, the film having a band gap En: 2.0eV is formed as an N type amorphous Si0.7N0.3 film 5. Finally, an Ag electrode 6 of large effect of light reflection is formed as the back electrode. Such a structure enables the N-layer to become transparent to a light transmitting through the I-layer because of its band gap wider than that of the I-layer and then to reflect the light on the electrode 6, resulting in photo absorption to the I-layer again. In this case, the lifetime of carriers generating in the I-layer is longer than that of the carriers in the N-layer. Therefore, further increase in efficiency is enabled.
Inventors:
MATSUBARA SUNAO
SHIMADA JIYUICHI
NAKAMURA NOBUO
UTAKA MASATOSHI
SHIMADA JIYUICHI
NAKAMURA NOBUO
UTAKA MASATOSHI
Application Number:
JP14503283A
Publication Date:
February 27, 1985
Filing Date:
August 10, 1983
Export Citation:
Assignee:
KOGYO GIJUTSUIN
International Classes:
H01L31/04; H01L31/056; H01L31/06; H01L31/075; (IPC1-7): H01L31/04
Domestic Patent References:
| JPS5664476A | 1981-06-01 | |||
| JPS5853869A | 1983-03-30 | |||
| JPS59130483A | 1984-07-27 |
Previous Patent: The resin lining construction method of an existing pipe, a hose material press holding jig
Next Patent: JPS6037789
Next Patent: JPS6037789