Title:
LOCAL INTERCONNECTION METHOD BY SILICIDE
Document Type and Number:
Japanese Patent JP3204268
Kind Code:
B2
Abstract:
PURPOSE: To obtain a method for forming the local interconnection body of titanium silicide between electrodes on an integrated circuit that is separated by a dielectric insulator.
CONSTITUTION: A first titanium layer 34 is formed on an insulator on an integrated circuit and a silicon layer 36 is formed on it. By applying a mask 40 to the silicon layer and performing etching, a silicon strip 42 for connecting an electrode is formed and a second titanium layer 44 is formed on it. Titanium and silicon are heated, thus forming a non-silicide made of titanium on the titanium silicide strip 52. Then, the titanium nonsilicide is eliminated.
Inventors:
Steven Shaohn Lee
Kennis B. Hooks
Gale Wilburn Mirror
Kennis B. Hooks
Gale Wilburn Mirror
Application Number:
JP12830091A
Publication Date:
September 04, 2001
Filing Date:
May 02, 1991
Export Citation:
Assignee:
Hyundai Electronics America
NC International Inc.
Symbios Incorporated
NC International Inc.
Symbios Incorporated
International Classes:
H01L21/3205; H01L21/28; H01L21/336; H01L21/768; H01L23/52; H01L29/78; (IPC1-7): H01L21/3205; H01L21/28; H01L21/336; H01L29/78
Domestic Patent References:
| JP21120A | ||||
| JP5678140A |
Other References:
【文献】国際公開89/11732(WO,A1)
Attorney, Agent or Firm:
Yoshiaki Nishiyama (2 outside)