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Patent Searching and Data


Title:
WORDLINE DRIVE CIRCUIT IN SEMICONDUCTOR MEMORY DEVICE
Document Type and Number:
Japanese Patent JPS62273697
Kind Code:
A
Abstract:

PURPOSE: To quickly drive a word line to an intermediate level with a simple circuit by giving a prescribed voltage to two control lines added between an output terminal of a decoder and a word line.

CONSTITUTION: In driving a word line 3 to a specific intermediate potential, if a high potential given to an output terminal 2 of a decoder 1 from a power voltage is outputted, a desired specific intermediate potential or a potential slightly higher than the intermediate potential is given to a control line 4 connected to the gate of a MISFET-Q1. Thus, the high potential outputted from the decoder 1 given directly to the word line 3 is prevented. Further, a high potential from the decoder 1 is given to the gate of the FET Q2 and a desired specific intermediate potential is given to a control line 3 connected to a drain of the FET Q2. Thus, the word line 3 is driven to the intermediate potential.


Inventors:
UEDA CHIHARU
Application Number:
JP11662286A
Publication Date:
November 27, 1987
Filing Date:
May 21, 1986
Export Citation:
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Assignee:
SEIKO INSTR & ELECTRONICS
International Classes:
H01L27/112; G11C11/34; G11C11/407; G11C16/06; G11C17/00; H01L21/8246; H01L27/10; (IPC1-7): G11C11/34; G11C17/00; H01L27/10