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Title:
Y-BA-CU-O-BASED OXIDE SUPERCONDUCTING THIN FILM AND ITS PRODUCTION
Document Type and Number:
Japanese Patent JPH0312321
Kind Code:
A
Abstract:

PURPOSE: To obtain the oxide superconducting thin film having a high critical current density by using a target added with Ag in the enough amt. to deposit a Y-Ba-Cu-O-based oxide superconducting thin film having a specified content of Ag to produce the thin film by sputtering.

CONSTITUTION: A target added with Ag in the enough amt. to deposit a Y-Ba- Cu-O-based oxide superconducting thin film contg. 0.2-10atom% Ag is used to produce the Y-Ba-Cu-O-based oxide superconducting thin film by sputtering. Since a specified amt. of Ag is added to the superconducting thin film in this method, the critical current density is elevated in either a single crystal thin film or a polycrystal thin film, and the density is not significantly decreased by the effect of a magnetic field. Furthermore, the density is not practically increased at <0.2atom% Ag, the critical temp. is lowered at >10atom% Ag, and the superconductivity is deteriorated as compared with the case where Ag is not added, then it is selected within a 0.2-10atom% Ag range.


Inventors:
OKUDA SHIGERU
Application Number:
JP1989000148805
Publication Date:
January 21, 1991
Filing Date:
June 12, 1989
Export Citation:
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Assignee:
SUMITOMO ELECTRIC INDUSTRIES
International Classes:
C04B41/87; C01G1/00; C01G3/00; C23C14/08; C30B29/22; H01B12/06; H01B13/00; H01L39/24; (IPC1-7): C01G3/00; C04B41/87; C23C14/08; C30B29/22; H01B12/06; H01B13/00; H01L39/24
Domestic Patent References:
JPH01215712A1989-08-29