VDMOS TRANSISTOR HAVING IMPROVED BREAKDOWN CHARACTERITIC AND MANUFACTURE THEREOF

Title:

VDMOS TRANSISTOR HAVING IMPROVED BREAKDOWN CHARACTERITIC AND MANUFACTURE THEREOF

Document Type and Number:

Japanese Patent JPH0613622

Kind Code:

A

Abstract:

PURPOSE: To provide a VDMOS transistor(TR), capable of sharply increasing the effect of a by planar field effect plate, without lowering an electric performance characteristic. CONSTITUTION: A field separating diffusion part 5 is formed under a strip 1 of a field separating layer and electrically connected to the source region 6 of a TR. Consequently, breakdown voltage can be increased without increasing internal resistor.

Inventors:

CONTIERO CLAUDIO (IT)
GALBIATI MARIA PAOLA (IT)
ZULLINO LUCIA (IT)

Application Number:

JP5523593A

Publication Date:

January 21, 1994

Filing Date:

February 18, 1993

Export Citation:

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Assignee:

ST MICROELECTRONICS SRL (IT)

International Classes:

H01L21/765; H01L29/06; H01L29/40; H01L29/78; (IPC1-7): H01L29/784

Attorney, Agent or Firm:

Hiroyuki Mori

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