Title:
【発明の名称】半導体装置およびその製造方法
Document Type and Number:
Japanese Patent JP3082800
Kind Code:
B2
Abstract:
A bipolar transistor and a diode are incorporated in a semiconductor integrated circuit device, and an emitter electrode is constituted by lower and upper doped polysilicon films sandwiching an oxygen-leakage film which tunnels minority carriers of the base therethrough at higher probability than the majority carriers so as to enhance the emitter injection efficiency, thereby allowing a designer to increase the base width and the distance from the p-n junction between the anode and the cathode for improving the breakdown voltage of the diode without sacrifice of the current amplification factor.
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Inventors:
Eiichi Hasegawa
Application Number:
JP13031892A
Publication Date:
August 28, 2000
Filing Date:
May 22, 1992
Export Citation:
Assignee:
NEC
International Classes:
H01L29/73; H01L21/331; H01L27/06; H01L29/08; H01L29/732; (IPC1-7): H01L21/331; H01L29/73
Domestic Patent References:
| JP1287954A | ||||
| JP6486558A | ||||
| JP422163A | ||||
| JP50103290A |
Attorney, Agent or Firm:
Naoki Kyomoto (2 outside)