Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
結晶成長装置用の加熱部品
Document Type and Number:
Japanese Patent JP2014522371
Kind Code:
A
Abstract:
Systems and methods are provided to promote uniform thermal environment to feedstock material (e.g., silicon) in a crucible of a crystal growth apparatus are provided herein. More specifically, a heating system may be arranged in the crystal growth apparatus so as to include at least a first and second heating element which are configured to distribute heat axisymmetrically to the feedstock material and the second heating element that is configured to distribute heat symmetrically to the feedstock material to thereby provide uniform heat distribution to the feedstock material in the crucible to allow for increased consistency in crystal ingot quality.

Inventors:
Chartier and curl
ラガヴァン and Parthasarathy Santana
And ルキヴ and Andre
Luck and デーヴ
Ravi and ブヴァラガサミー G.
Application Number:
JP2014514457A
Publication Date:
September 04, 2014
Filing Date:
May 01, 2012
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
G TA tea Corporation GTAT CORPORATION
International Classes:
C30B11/00; C01B33/02; C30B29/06; F27B14/14; F27D11/02; F27D19/00
Domestic Patent References:
JP2005053722A2005-03-03
JPH09235175A1997-09-09
JP2009292673A2009-12-17
JPH10167876A1998-06-23
JPH09235178A1997-09-09
JP2001226191A2001-08-21
Foreign References:
WO2002027076A12002-04-04
Attorney, Agent or Firm:
Norio Saeki
Nakamura Positive exhibition
Takuo Saeki
Yuko Saeki
Naoko Ushiyama