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Title:
A high purity nickel sputtering target and a manufacturing method for the same
Document Type and Number:
Japanese Patent JP5951599
Kind Code:
B2
Abstract:
This high purity Ni sputtering target having an average crystal grain size of 1,000 µm or less is characterized in that crystalline orientation of the sputter surface is random, and that crystalline orientation of the center surface of the sputtering target in the thickness direction is also random. It is preferable that the order of peaks do not change even if X-ray diffraction analysis is performed to the powdered sputtering target. With such configuration, the high purity Ni sputtering target, which makes it possible to obtain a stable sputter rate, and can be used for a long period of time, can be obtained.

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Inventors:
Nobuaki Nakajima
Toru Komatsu
Takashi Sano
Application Number:
JP2013510965A
Publication Date:
July 13, 2016
Filing Date:
April 12, 2012
Export Citation:
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Assignee:
Toshiba Corporation
Toshiba Materials Co., Ltd.
International Classes:
C23C14/34; B21J5/00; C22C19/03; C22F1/10
Domestic Patent References:
JP2008101275A2008-05-01
JP2003517101A2003-05-20
JP2003166051A2003-06-13
JP2000234167A2000-08-29
JP2002220659A2002-08-09
JP2010133001A2010-06-17
JP2009155722A2009-07-16
JP2008101275A2008-05-01
Foreign References:
WO2005045090A12005-05-19
Attorney, Agent or Firm:
Patent business corporation Tokyo International Patent Office



 
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