Title:
半導体基板を処理するための高速熱処理反応炉
Document Type and Number:
Japanese Patent JP4084412
Kind Code:
B2
Abstract:
A structure for use in a reactor for processing a substrate, the structure comprising:a susceptor having a first surface adapted for mounting a substrate thereon; a second surface; and a plurality of openings extending through said susceptor from said first surface to said second surface wherein each opening in said plurality of openings extending through said susceptor from said first surface to said second surface has a surface; and a plurality of substrate support pins; wherein a substrate support pin is movably mounted in each of said plurality of openings and in a first position said substrate support pins are seated in said susceptor when said substrate is supported by said susceptor, and in a second position said substrate support pins hold said substrate above said first surface; and each substrate support pin in said plurality of substrate support, pins has a surface wherein said first position, the surface on the substrate support pin mates with the surface of the opening so as to inhibit gas flow through said plurality of openings in said susceptor during processing.
Inventors:
Moore, Gary M
Nishikawa, Katsuhito
Nishikawa, Katsuhito
Application Number:
JP51709694A
Publication Date:
April 30, 2008
Filing Date:
January 21, 1994
Export Citation:
Assignee:
Moore Epitaxial, Inc.
International Classes:
C23C16/44; H01L21/205; C23C16/455; C23C16/458; C23C16/46; C23C16/48; C23C16/54; C30B25/02; C30B25/10; C30B25/12; C30B25/14; C30B31/12; C30B31/14; F27B5/04; F27B5/14; F27B5/16; F27B5/18; F27D11/00; F27D11/02; H01L21/00; H01L21/22; H01L21/26; H01L21/324; H01L21/683; H01L21/687; H05B3/00
Domestic Patent References:
| JP63058925A | ||||
| JP3295225A | ||||
| JP3146672A | ||||
| JP61214515A | ||||
| JP63058926A | ||||
| JP2148717A | ||||
| JP56124437A | ||||
| JP1125822A | ||||
| JP58139424A | ||||
| JP4245420A | ||||
| JP61215290A | ||||
| JP62076720A | ||||
| JP5291154A |
Attorney, Agent or Firm:
Yoichi Oshima