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Title:
A high surface quality GaN wafer and a manufacturing method for the same
Document Type and Number:
Japanese Patent JP6054282
Kind Code:
B2
Abstract:
A method for producing a high quality wafer comprising Al x Ga y In z N, wherein 0

Inventors:
シュエピン・シュ
ロバート・ピー・ボード
Application Number:
JP2013230182A
Publication Date:
December 27, 2016
Filing Date:
November 06, 2013
Export Citation:
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Assignee:
CREE INC.
International Classes:
C30B25/18; H01L21/304; C09G1/02; C30B29/38; C30B29/40; C30B33/00; C30B33/10; G01Q30/12; H01L21/306; H01L33/00; G01Q60/00
Domestic Patent References:
JP11340510A
JP10173288A
JP10036816A
JP2001102307A
JP2000252217A
JP2001148533A
JP11162852A
JP7161669A
JP63084872A
JP9045960A
JP11320349A
JP58014536A
JP3115383A
JP11260774A
Foreign References:
Attorney, Agent or Firm:
特許業務法人特許事務所サイクス