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Title:
VERTICAL TYPE SEMICONDUCTOR DEVICE WITH HIGH VOLTAGE INCLUDING PLURALITY OF SILICON COLUMNS IN RACE TRACK STRUCTURE
Document Type and Number:
Japanese Patent JP2018037653
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a vertical type semiconductor device including a dummy column and a plurality of race track columns.SOLUTION: A dummy columnar of a semiconductor material is extended to a first lateral direction. A plurality of race track columnar 208 including the semiconductor material surrounds the dummy columnar. Each of a plurality of race track columnar forms a race track form so as to include a first liner region and extended to the first lateral direction and a first region formed in a circular form. The plurality of race track columnar includes a first race track columnar 210 and a second race track columnar 212. The first race track columnar is arranged at a position near from the dummy columnar. The second race track columnar surrounds the first race track columnar. The first race track columnar is arranged between the dummy columnar and the second race track columnar. The semiconductor device surrounds the dummy columnar, and includes a plurality of spacing regions 218 including a first spacing region 220 arranged between the first race track columnar and the dummy columnar.SELECTED DRAWING: Figure 2A

Inventors:
ALEXEI ANKOUDINOV
SORIN GEORGESCU
VIJAY PARTHASARATHY
KELLY E MARCUM
BU JIANKANG
Application Number:
JP2017159846A
Publication Date:
March 08, 2018
Filing Date:
August 23, 2017
Export Citation:
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Assignee:
POWER INTEGRATIONS INC
International Classes:
H01L29/78; H01L21/76; H01L29/06; H01L29/861; H01L29/868
Domestic Patent References:
JP2006216927A2006-08-17
JP2011134951A2011-07-07
JP2007535822A2007-12-06
JP2008205439A2008-09-04
JP2005286042A2005-10-13
Attorney, Agent or Firm:
Masahiro Abe