Title:
結晶シリコン系太陽電池の製造方法、および結晶シリコン系太陽電池モジュールの製造方法
Document Type and Number:
Japanese Patent JP6568518
Kind Code:
B2
Abstract:
Problem to be solved is providing a crystalline silicon-based solar cell in which a plated metal electrode layer is formed on the entire back surface, while precipitation of an undesired metal, diffusion of a metal into a silicon substrate, and so on are suppressed. To solve the problem, a crystalline silicon-based solar cell according to the present invention includes a first intrinsic silicon-based thin-film (2), a p-type silicon-based thin-film (3), a first transparent electrode layer (4), and a patterned collecting electrode (11) on a first principal surface (51) of an n-type crystalline silicon substrate (1); and a second intrinsic silicon-based thin-film (7), an n-type silicon-based thin-film (8), a second transparent electrode layer (9), and a plated metal electrode (21) on a second principal surface (52) of the n-type crystalline-silicon substrate (1). On a peripheral edge of the first principal surface, an insulating region freed of a short-circuit between the first transparent electrode layer (4) and the second transparent electrode layer (9) is provided. The plated metal electrode (21) is formed on an entire region of the second transparent electrode layer (9).
Inventors:
Toshihiko Utsu
Daisuke Adachi
Utsu Hisashi
Daisuke Adachi
Utsu Hisashi
Application Number:
JP2016515913A
Publication Date:
August 28, 2019
Filing Date:
April 09, 2015
Export Citation:
Assignee:
Kaneka Corporation
International Classes:
H01L31/0224; H01L31/0747
Domestic Patent References:
| JP9129904A |
Foreign References:
| WO2014054600A1 |
Attorney, Agent or Firm:
Masato Shintaku
Yoshimoto Riki
Yoshimoto Riki