Title:
アンモニア前駆体を触媒と共に用いてGaAsN合金を含む化合物をMOCVD成長させるための方法
Document Type and Number:
Japanese Patent JP5302250
Kind Code:
B2
Abstract:
A method of using ammonia to form a GaAs alloy with nitrogen atoms is described. The method includes the operation of introducing ammonia with an agent to assist in the breakdown of the ammonia into a reaction chamber with the GaAs film. Agents that are described include radiation as well as compounds that include aluminum.
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Inventors:
Michael aequnisel
David W Treat
David W Treat
Application Number:
JP2010058879A
Publication Date:
October 02, 2013
Filing Date:
March 16, 2010
Export Citation:
Assignee:
XEROX CORPORATION
International Classes:
C23C16/34; H01L21/205; C30B25/02; C30B29/40; H01L21/20; H01L31/18; H01S5/042; H01S5/343
Domestic Patent References:
| JP2002344088A |
Foreign References:
| WO2002078144A1 |
Attorney, Agent or Firm:
Kenji Yoshida
Jun Ishida
Jun Ishida