Title:
ジアザジエン系金属化合物、これの製造方法及びこれを利用した薄膜形成方法
Document Type and Number:
Japanese Patent JP5779823
Kind Code:
B2
Abstract:
The present invention relates to a diazadiene (DAD)-based metal compound, to a method for preparing the same and to a method for forming a thin film using the same. The diazadiene (DAD)-based metal compound of the present invention is provided in a gaseous state to be formed into a metal thin film or a metal oxide thin film by chemical vapor deposition or atomic layer deposition. Particularly, the diazadiene-based organic metal compound of the present invention has advantages in that it may be formed into a metal thin film or a metal oxide thin film and it can be prepared in a relatively inexpensive way without using highly toxic ligands.
Inventors:
Han, Won Sok
Application Number:
JP2013539761A
Publication Date:
September 16, 2015
Filing Date:
November 17, 2011
Export Citation:
Assignee:
UPC Chemical Company Limited
International Classes:
C07F15/06; C07F13/00; C07F15/04; C23C16/18; C23C16/40; H01L21/365
Domestic Patent References:
| JP2002542397A |
Foreign References:
| WO2010079979A1 |
Other References:
Organometallics,2011年 8月25日,Vol. 30,5010-5017
Attorney, Agent or Firm:
Longhua International Patent Service Corporation