Title:
炉のためのマルチゾーンヒータ
Document Type and Number:
Japanese Patent JP2009543996
Kind Code:
A
Abstract:
The present invention relates to an apparatus and method for heating a semiconductor processing chamber. One embodiment of the present invention provides a furnace for heating a semiconductor processing chamber. The furnace comprises a heater surrounding side walls of the semiconductor processing chamber, wherein the heater comprises a plurality of heating elements connected in at least two independently controlled zones, and a shell surrounding the heater.
Inventors:
Yudovsky, Joseph
Application Number:
JP2009519570A
Publication Date:
December 10, 2009
Filing Date:
June 12, 2007
Export Citation:
Assignee:
APPLIED MATERIALS,INCORPORATED
International Classes:
F27B17/00; F27D11/02; H05B3/10; H05B3/14
Domestic Patent References:
| JP2003031647A | 2003-01-31 | |||
| JPH0940481A | 1997-02-10 | |||
| JP2001223257A | 2001-08-17 | |||
| JPH11317283A | 1999-11-16 | |||
| JPH08186081A | 1996-07-16 |
Foreign References:
| US20060127067A1 | 2006-06-15 |
Attorney, Agent or Firm:
Yoshiki Hasegawa
Yuichi Yamada
Ikeda adult
Yuichi Yamada
Ikeda adult