Title:
シリコンの精製方法及び精製装置
Document Type and Number:
Japanese Patent JP5822393
Kind Code:
B2
Abstract:
[Objects] To improve productivity and reduce thermal energy consumption in manufacturing of high purity silicon as a raw material for metallurgical grade pure silicon. [Means to Solve] After conducting a first treatment of either removing boron by water-vapor added plasma arc heating or low-pressure oxygen plasma arc heating upon raw silicon contained in a hearth in a chamber to thereby putting the raw silicon into a high temperature molten state to thereby oxidizing and removing boron by evaporation, or removing phosphorus by electron beam irradiation to thereby putting the raw silicon into a high temperature molten state to thereby remove phosphorus by evaporation in an atmosphere suitable to the treatment; the atmosphere of the chamber is then changed to a vacuum atmosphere suitable to the remaining second treatment, while maintaining the silicon contained in the hearth in its molten state, and the second purification treatment is conducted; whereafter end(s) enriched in impurities is cut off by way of one-way coagulation method to obtain a high purity refined silicon ingot highly free from phosphorus, boron and other impurities.
Inventors:
Nobuyuki Mori
Hiroshi Yano
Toshiyuki Shiraishi
Takashi Takada
Nobuhiro Shimizu
Takahashi travelogue
Toshihiro Mitsuka
Hiroshi Yano
Toshiyuki Shiraishi
Takashi Takada
Nobuhiro Shimizu
Takahashi travelogue
Toshihiro Mitsuka
Application Number:
JP2011511423A
Publication Date:
November 24, 2015
Filing Date:
April 27, 2010
Export Citation:
Assignee:
Mori Ryuhei
International Classes:
C01B33/037; F27D7/06; F27D11/08
Domestic Patent References:
| JP2010100508A | 2010-05-06 | |||
| JP2010100508A | 2010-05-06 |
Attorney, Agent or Firm:
Takao Iriko
Previous Patent: 偏心揺動型減速機
Next Patent: TREATMENT OF METAL SURFACE TREATING WASTE LIQUID BY ION EXCHANGE MEMBRANE DIALYZING METHOD
Next Patent: TREATMENT OF METAL SURFACE TREATING WASTE LIQUID BY ION EXCHANGE MEMBRANE DIALYZING METHOD