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Patent Searching and Data


Title:
超臨界二酸化炭素処理を用いて基板を処理するためのシステム及び方法
Document Type and Number:
Japanese Patent JP2008505484
Kind Code:
A
Abstract:
A method and system for processing a substrate in a film removal system. The method includes providing the substrate in a substrate chamber of a film removal system, where the substrate has a micro-feature containing a dielectric film on a sidewall of the micro-feature and a photoresist film covering a portion the dielectric film, and performing a first film removal process using supercritical CO2 processing to remove the portion of the dielectric film not covered by the photoresist film. Following the first film removal process, a second film removal process using supercritical CO2 processing can be performed to remove the photoresist film. Alternately, wet processing can be used to perform one of the first film removal process or the second film removal process.

Inventors:
Glen W. Gale
Joseph T. Hillman
Ganilla Jacobson
Bentley Palmer
Application Number:
JP2007519198A
Publication Date:
February 21, 2008
Filing Date:
April 22, 2005
Export Citation:
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Assignee:
東京エレクトロン株式会社
ト-キョ-・エレクトロン・アメリカ・インコーポレーテッド
International Classes:
H01L21/306; G03F7/30; G03F7/42; H01L21/304; H01L21/311
Attorney, Agent or Firm:
Masatake Shiga
Takashi Watanabe
Yasuhiko Murayama
Shinya Mitsuhiro