真空熱処理装置および半導体デバイスの製造方法

Title:

真空熱処理装置および半導体デバイスの製造方法

Document Type and Number:

Japanese Patent JP5656400

Kind Code:

B2

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Inventors:

柴垣真果
関口篤史
土井浩志
真下かおり
流石勇一

Application Number:

JP2009297950A

Publication Date:

January 21, 2015

Filing Date:

December 28, 2009

Export Citation:

Assignee:

キヤノンアネルバ株式会社

International Classes:

F27B5/05; F27D11/08; H01L21/02; H05B1/00; H05B7/00

Attorney, Agent or Firm:

Nobuaki Kato
Okabe 讓
Shin-ichi Usui
Takao Ochi
Morning sun Nobumitsu
Katsumi Miyama

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