Title:
ACOUSTIC WAVE DEVICE, HIGH FREQUENCY FRONT END CIRCUIT AND COMMUNICATION DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/049608
Kind Code:
A1
Abstract:
Provided is an acoustic wave device which is capable of easily adjusting a fractional band, and which is also capable of effectively confining the energy of elastic waves. This acoustic wave device 1 is provided with: a semiconductor substrate 2 that has a first main surface 2a and a second main surface 2c; a piezoelectric thin film 5 that is directly or indirectly provided on the first main surface 2a of the semiconductor substrate 2; and an IDT electrode 6 that is provided on the piezoelectric thin film 5. The semiconductor that constitutes the semiconductor substrate 2 is a high acoustic velocity material through which bulk waves propagate at an acoustic velocity that is higher than the acoustic velocity at which elastic waves propagate through the piezoelectric thin film 5. The semiconductor substrate 2 is composed of: a first region 2b that contains the first main surface 2a; and a second region 2d that is the region other than the first region 2c and contains the second main surface 2c. The electrical resistance of the first region 2c is lower than the electrical resistance of the second region 2d.
Inventors:
IWAMOTO HIDEKI (JP)
Application Number:
PCT/JP2018/030084
Publication Date:
March 14, 2019
Filing Date:
August 10, 2018
Export Citation:
Assignee:
MURATA MANUFACTURING CO (JP)
International Classes:
H03H9/25
Domestic Patent References:
| WO2012086639A1 | 2012-06-28 |
Foreign References:
| JPH04343514A | 1992-11-30 | |||
| JP2002026687A | 2002-01-25 |
Attorney, Agent or Firm:
MIYAZAKI & METSUGI (JP)
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