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Title:
ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, METHOD FOR PRODUCING ELECTRONIC DEVICE, AND RESIN
Document Type and Number:
WIPO Patent Application WO/2019/167725
Kind Code:
A1
Abstract:
The present invention addresses the problem of providing an active light sensitive or radiation sensitive resin composition which forms a pattern that is excellent in terms of LER and collapse prevention performance. The present invention also addresses the problem of providing a resist film, a pattern forming method and a method for producing an electronic device, each of which uses this active light sensitive or radiation sensitive resin composition. The present invention also addresses the problem of providing a resin which is able to be used for this active light sensitive or radiation sensitive resin composition. An active light sensitive or radiation sensitive resin composition according to the present invention contains: a compound which generates an acid when irradiated with active light or radiation; and a resin, the polarity of which is increased by the action of an acid. The resin contains a repeating unit that is represented by general formula (B-1); and the content of the repeating unit represented by general formula (B-1) is 5-70% by mass relative to all repeating units contained in the resin. In general formula (B-1), R1 represents a hydrogen atom or an organic group; and ring W1 represents a ring which contains at least one carbon atom and one nitrogen atom, and which may have a substituent.

Inventors:
OGAWA MICHIHIRO (JP)
KAWASHIMA TAKASHI (JP)
KANEKO AKIHIRO (JP)
GOTO AKIYOSHI (JP)
Application Number:
PCT/JP2019/006121
Publication Date:
September 06, 2019
Filing Date:
February 19, 2019
Export Citation:
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Assignee:
FUJIFILM CORP (JP)
International Classes:
G03F7/039; C08F26/06; G03F7/038; G03F7/20
Domestic Patent References:
WO2012043685A12012-04-05
WO2016181722A12016-11-17
WO2014017144A12014-01-30
WO2016157988A12016-10-06
Foreign References:
JP2007093909A2007-04-12
JP2014041328A2014-03-06
JP2013228681A2013-11-07
US20150004533A12015-01-01
JP2014134686A2014-07-24
JP2013011833A2013-01-17
US20080248425A12008-10-09
JP2002090991A2002-03-27
US20150168830A12015-06-18
US20160274458A12016-09-22
US20160237190A12016-08-18
JP2002062667A2002-02-28
US20070178407A12007-08-02
US20080085466A12008-04-10
US20070275326A12007-11-29
US20160299432A12016-10-13
US20130244438A12013-09-19
US20160070167A12016-03-10
JP2016201426A2016-12-01
JP2016206500A2016-12-08
US20150227049A12015-08-13
JP2015123351A2015-07-06
US20150104957A12015-04-16
JP2004235468A2004-08-19
US20100020297A12010-01-28
JPH03270227A1991-12-02
US20130209941A12013-08-15
Other References:
"EUV Resist Curing Technique for LWR Reduction and Etch Selectivity Enhancement", PROC. OF SPIE, vol. 8328, pages 83280N - 1
See also references of EP 3761114A4
Attorney, Agent or Firm:
ITOH Hideaki et al. (JP)
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