Title:
ALKALINE DEVELOPER SOLUABLE SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION
Document Type and Number:
WIPO Patent Application WO/2019/009413
Kind Code:
A1
Abstract:
[Problem] To provide a resist underlayer film whereby the resist underlayer film present in an underlayer of a photoresist can be moved at the same time as, and in accordance with, a resist pattern, at the same time as development of the photoresist, using an alkaline developer used in development of photoresists after exposure. [Solution] A resist underlayer film-forming composition for lithography, being a silicon-containing resist underlayer film that includes a component (a) and an element (b) and is dissolved and removed by an alkaline developer in accordance with a resist pattern and in conjunction with an upper layer resist when the upper layer resist is being developed. The component (a) is a silane compound including a hydrolizable silane, a hydrolyzate thereof, a hydrolytic condensate thereof, or a combination of these. The element (b) is a dissolution-inducing element for alkaline developers. The dissolution-inducing element (b) for alkaline developers is included in the compound structure for component (a). The dissolution-inducing element (b) for alkaline developers is a photoacid generator.
Inventors:
SHIBAYAMA WATARU (JP)
NAKAJIMA MAKOTO (JP)
NAKAJIMA MAKOTO (JP)
Application Number:
PCT/JP2018/025724
Publication Date:
January 10, 2019
Filing Date:
July 06, 2018
Export Citation:
Assignee:
NISSAN CHEMICAL CORP (JP)
International Classes:
G03F7/11; C08G77/14; G03F7/26; H01L21/027
Domestic Patent References:
| WO2016080226A1 | 2016-05-26 |
Foreign References:
| JP2015505335A | 2015-02-19 | |||
| JP2012511742A | 2012-05-24 | |||
| JP2017083849A | 2017-05-18 | |||
| JP2015028145A | 2015-02-12 | |||
| JP2015197596A | 2015-11-09 | |||
| JP2004341479A | 2004-12-02 | |||
| JP2017020000A | 2017-01-26 | |||
| US20140178822A1 | 2014-06-26 |
Attorney, Agent or Firm:
HANABUSA PATENT & TRADEMARK OFFICE (JP)
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