Title:
ANTI-FUSE MEMORY CELL AND DATA READ-WRITE CIRCUIT COMPRISING SAME, AND ANTI-FUSE MEMORY AND OPERATION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2023/010687
Kind Code:
A1
Abstract:
Disclosed are an anti-fuse memory cell and a data read-write circuit comprising same, and an anti-fuse memory and an operation method therefor. The anti-fuse memory cell comprises a base; the base is provided with an N well and a non-N well region; the non-N well region is provided with a first NMOS tube; a gate of the first NMOS tube is used for inputting a first strobe signal; the N well is provided with a PMOS tube and a capacitor tube; a gate of the PMOS tube and a gate of the capacitor tube are both connected to a drain of the first NMOS tube; and a drain, a source and a substrate of the PMOS tube and a drain, a source, and a substrate of the capacitor tube are all connected to a controllable power supply. In the present invention, the area of a programmable region is increased, the on resistance of the memory cell after breakdown is reduced, the reliability is improved, the cost is reduced, and the data reading speed is increased.
Inventors:
WANG CHUNHUA (CN)
Application Number:
PCT/CN2021/124181
Publication Date:
February 09, 2023
Filing Date:
October 15, 2021
Export Citation:
Assignee:
NANJING QINHENG MICROELECTRONICS CO LTD (CN)
International Classes:
G11C17/16; G11C7/22
Foreign References:
| CN113345506A | 2021-09-03 | |||
| US20170372790A1 | 2017-12-28 | |||
| CN109961821A | 2019-07-02 | |||
| CN111798911A | 2020-10-20 | |||
| US20140340955A1 | 2014-11-20 | |||
| US20170125121A1 | 2017-05-04 |
Attorney, Agent or Firm:
NANJING HUAHENG INTELLECTUAL PROPERTY AGENCY OFFICE (GENERAL PARTNERSHIP) (CN)
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