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Title:
ANTI-FUSE STORAGE UNIT CIRCUIT AND ARRAY CIRCUIT, AND READ/WRITE METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2021/056958
Kind Code:
A1
Abstract:
An anti-fuse storage unit circuit and array circuit and a read/write method therefor. The anti-fuse storage unit circuit comprises: an anti-fuse device; a switch module coupled to the anti-fuse device; a selection module coupled to the switch module; and a control module (12) coupled to the anti-fuse device and the switch module respectively; the control module (12) is used to switch an on-off mode of the switch module according to a breakdown state of the anti-fuse device. The anti-fuse storage unit circuit has advantages that: 1, said storage unit circuit is a pure combinational circuit, and compared with a sequential circuit, after a delay of some time, all paths of said storage unit circuit are turned off and the whole circuit has no logic action, the static power consumption is low, and the power consumption is approximately 0; 2, two positive feedback loops are substantially formed by means of the design of the switch module and a logic operation module, so that a reading circuit can read "0" or "1" more reliably; 3, a complex sequential control portion is omitted, and even outputs OUTA/OUTB of the reading circuit can be not latched and directly used as coding outputs of an anti-fuse; and 4, the layout wiring of the circuit is flexible.

Inventors:
LI, Xin (Haiheng Building No.6 Cuiwei Road, Economic And Technological Development Zon, Hefei Anhui 0, CN)
Application Number:
CN2020/076311
Publication Date:
April 01, 2021
Filing Date:
February 22, 2020
Export Citation:
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Assignee:
CHANGXIN MEMORY TECHNOLOGIES, INC. (Haiheng Building No.6 Cuiwei Road, Economic And Technological Development Zon, Hefei Anhui 0, CN)
International Classes:
G11C17/14
Attorney, Agent or Firm:
SHANGHAI WINSUN INTELLECTUAL PROPERTY AGENCY (12/F Enterprice Square 228 Meiyuan Road, Jingan District, Shanghai 0, CN)
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