Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
APPARATUS AND METHOD FOR PRODUCING POLYCRYSTALLINE SILICON, AND POLYCRYSTALLINE SILICON
Document Type and Number:
WIPO Patent Application WO/2021/065685
Kind Code:
A1
Abstract:
The present invention reduces the concentration of impurities in a polycrystalline silicon to be produced. An apparatus (1) for producing a polycrystalline silicon (S1) is provided with: a reactor (10) which contains a raw gas (G1) for silicon precipitation; a supply pipe (20) which forms a supply flow path in which the raw gas (G1) flows and which includes an inflow port (111) formed in the reactor (10), wherein the supply flow path is for supplying the raw gas (G1) into the reactor (10); and a filter which is provided in the supply flow path and removes impurities mixed in the raw gas (G1).

Inventors:
ISHIKAWA KOICHI (JP)
Application Number:
PCT/JP2020/036104
Publication Date:
April 08, 2021
Filing Date:
September 24, 2020
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
TOKUYAMA CORP (JP)
International Classes:
C01B33/02; C01B33/035
Foreign References:
JP2013212974A2013-10-17
JP2004002122A2004-01-08
JPH06310444A1994-11-04
JPS60254614A1985-12-16
JPH1120895A1999-01-26
JP2005008430A2005-01-13
Attorney, Agent or Firm:
HARAKENZO WORLD PATENT & TRADEMARK (JP)
Download PDF: