Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
ARCHITECTURE, METHOD AND MEMORY CELL FOR 3D NAND STYLE MFMIS FEFET TO ENABLE 3D FERROELECTRIC NONVOLATILE DATA STORAGE
Document Type and Number:
WIPO Patent Application WO/2022/082718
Kind Code:
A1
Abstract:
A three-dimensional memory including a substrate (310), a stack of alternating stack buffer layers (320) and stack conductor layers (330) formed on the substrate (310), and a channel formed in the stack and extending in a depth direction from a top surface of the stack to a top surface of the substrate (310). The channel may include a channel insulator layer (338) formed on a surface of the stack in the channel and a channel semiconductor layer (340) formed on a surface of the channel insulator layer (338). The stack conductor layer (330) may include a first metal section, a second metal section, and a ferroelectric material (334) positioned between the first metal section and the second metal section.

Inventors:
LIU JUN (CN)
Application Number:
PCT/CN2020/123204
Publication Date:
April 28, 2022
Filing Date:
October 23, 2020
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
YANGTZE ADVANCED MEMORY IND INNOVATION CENTER CO LTD (CN)
International Classes:
G11C11/22; H01L27/1159; H01L27/11597
Domestic Patent References:
WO2019125352A12019-06-27
Foreign References:
CN111725210A2020-09-29
CN111799263A2020-10-20
KR20200044215A2020-04-29
Attorney, Agent or Firm:
NTD UNIVATION INTELLECTUAL PROPERTY AGENCY LTD. (CN)
Download PDF: