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Title:
ARCITECTURE, STRUCTURE, METHOD AND MEMORY ARRAY FOR 3D FeRAM
Document Type and Number:
WIPO Patent Application WO/2022/082750
Kind Code:
A1
Abstract:
A three-dimensional memory architecture including a top cell array of memory cells, a bottom cell array of memory cells, a plurality of word lines coupled to the arrays, and a plurality of word line decoders coupled to the word lines and operable to selectively activate the word lines. The plurality of word line decoders extend from a first edge of the bottom cell array and from a second edge of the bottom cell array, the second edge being opposite the first edge, wherein the plurality of word line decoders include a first portion of word line decoders and a second portion of word line decoders, and wherein the first portion of word line decoders is shifted relative to the second portion of the word line decoders along a direction parallel, or substantially parallel, to the first edge and second edge.

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Inventors:
LIU JUN (CN)
Application Number:
PCT/CN2020/123331
Publication Date:
April 28, 2022
Filing Date:
October 23, 2020
Export Citation:
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Assignee:
YANGTZE ADVANCED MEMORY IND INNOVATION CENTER CO LTD (CN)
International Classes:
H01L27/11507; G11C11/22; H01L27/11514
Foreign References:
US20140340952A12014-11-20
CN109378313A2019-02-22
US8284601B22012-10-09
US8637870B22014-01-28
US20080084729A12008-04-10
US20150146480A12015-05-28
US20050024915A12005-02-03
Attorney, Agent or Firm:
NTD UNIVATION INTELLECTUAL PROPERTY AGENCY LTD. (CN)
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